收藏本站
NTD4805N, NVD4805N
Power MOSFET
30 V, 88 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? AEC ? Q101 Qualified and PPAP Capable ? NVD4805N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
5.0 m W @ 10 V
7.4 m W @ 4.5 V
D
I D MAX
88 A
MAXIMUM RATINGS (T J = 25 ? C unless otherwise noted)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Value
30
Unit
V
G
N ? Channel
Gate ? to ? Source Voltage
V GS
? 20
V
S
Power Dissipation
1 2
3
3
4
Continuous Drain
Current (R q JA ) (Note 1)
Power Dissipation
(R q JA ) (Note 1)
Continuous Drain
Current (R q JA ) (Note 2)
Steady
State
(R q JA ) (Note 2)
Continuous Drain
Current (R q JC )
(Note 1)
Power Dissipation
(R q JC ) (Note 1)
Pulsed Drain Current    t p =10 m s
Current Limited by Package
T A = 25 ? C
T A = 85 ? C
T A = 25 ? C
T A = 25 ? C
T A = 85 ? C
T A = 25 ? C
T C = 25 ? C
T C = 85 ? C
T C = 25 ? C
T A = 25 ? C
T A = 25 ? C
I D
P D
I D
P D
I D
P D
I DM
I DmaxPkg
17.4
13.5
2.65
12.7
9.8
1.41
95
73
79
175
45
A
W
A
W
A
W
A
A
4
4
1
2
CASE 369AA CASE 369D
DPAK IPAK
(Bent Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
? 55 to
175
55
? C
A
1
2
3
Source Current (Body Diode) Pulsed t p =20 m s I SM 175 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain ? to ? Source Avalanche E AS 288 mJ
Energy (V DD = 24 V, V GS = 10 V,
L = 1.0 mH, I L(pk) = 24 A, R G = 25 W )
Lead Temperature for Soldering Purposes T L 260 ? C
(1/8 ? from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate Source
Gate Drain Source
Y = Year
WW = Work Week
4805N = Device Code
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
March, 2013 ? Rev. 7
1
Publication Order Number:
NTD4805N/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTD4806NT4G MOSFET N-CH 30V 11.3A DPAK
NTD4808N-1G MOSFET N-CH 30V 9.8A IPAK
NTD4809NHT4G MOSFET N-CH 30V 9A DPAK
NTD4809NT4G MOSFET N-CH 30V 9.6A DPAK
NTD4810NHT4G MOSFET N-CH 30V 8.6A DPAK
NTD4810NT4G MOSFET N-CHAN 10.8A 30V DPAK
NTD4813N-35G MOSFET N-CH 30V 7.6A IPAK
NTD4813NHT4G MOSFET N-CH 30V 40A DPAK
相关代理商/技术参数
NTD4805N-35G 功能描述:MOSFET NFET 30V 88A 5MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4805NT4G 功能描述:MOSFET NFET 30V 88A 5MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4806N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
NTD4806N-1G 功能描述:MOSFET NFET 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4806N-1H 制造商:ON Semiconductor 功能描述:
NTD4806N-35G 功能描述:MOSFET NFET 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4806NA-1G 功能描述:MOSFET NFET DPAK 30V 76A 6mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4806NA-35G 功能描述:MOSFET NFET IPAK 30V 76A 6mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube